tm august 2006 FDS2734 single n-chan nel uitrafet trench ? mosfet ?2006 fairchild semiconductor corporation FDS2734 rev. b www.fairchildsemi.com 1 pin 1 so- 8 FDS2734 n-channel uitrafet trench ? mosfet 250v, 3.0a, 117m ? features ? max r ds(on) =117m ? at v gs =10v, i d = 3.0a ? max r ds(on) =126m ? at v gs = 6v, i d = 2.8a ? fast switching speed ? high performance trench te chnology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant general descriptions this single n-channel mosf et is produced using fairchild semiconductor? s advanced uitrafet trench ? process that has been espec ially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? dc-dc conversion mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 250 v v gs gate to source voltage 20 v i d drain current -continuous (note 1a) 3.0 a -pulsed 50 e as single pulse avalanche energy (note 3) 12.5 mj p d power dissipation (note 1a) 2.5 w power dissipation (note 1b) 1.0 t j , t stg operating and storage junction temperature range -55 to 150 o c r ja thermal resistance, junction- to -ambient (note 1a) 50 o c/w r ja thermal resistance, junction- to- ambient (note 1b) 125 r jc thermal resistance, junction -to- case (note 1) 25 device marking device package reel size tape width quantity FDS2734 FDS2734 so-8 13?? 12mm 2500 units 4 3 2 1 5 6 7 8 d d d d g s s s
FDS2734 single n-chan nel uitrafet trench ? mosfet FDS2734 rev. b www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics (note 2) dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 250 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c 157 mv/ o c i dss zero gate voltage drain current v ds = 200v,v gs =0 v 1 a v ds = 200v, v gs = 0v t j = 55 o c10 i gss gate to source leakage current v gs = 20v, v ds =0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a234v ? v gs(th) ? t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 o c -10.7 mv/ c r ds( on ) drain to source on resistance v gs = 10v, i d = 3.0a, 97 117 m ? v gs = 6v , i d = 2.8a, 101 126 v gs = 10v, i d = 3.0a, t j = 125 o c 205 225 g fs forward transconductance v ds =10v, i d =3.0a, 15.1 s c iss input capacitance v ds = 100v, v gs = 0v, f = 1mhz 1960 2610 pf c oss output capacitance 85 130 pf c rss reverse transfer capacitance 26 40 pf r g gate resistance f = 1mhz 0.7 ? t d(on) turn-on delay time v dd = 125v, i d = 3a v gs = 10v, r gs = 6 ? 23 37 ns t r rise time 11 19 ns t d(off) turn-off delay time 40 64 ns t f fall time 11 19 ns q g total gate charge v ds = 125v, v gs = 10v i d = 3.0a 32 45 nc q gs gate to source gate charge 9 nc q gd gate to drain charge 8 nc v sd source to drain diode voltage i sd = 3.0a 0.74 1.2 v t rr reverse recovery time i f = 3.0 a, d if /dt = 100a/ s 72 108 ns q rr reverse recovery charge 185 278 nc notes: 1: r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user?s board design. 2: pulse test width <300 s, duty cycle <2% . 3: starting t j = 25 c, l = 1mh, i as = 5a, v dd = 100v, v gs = 10v b) 125 c/w when mounted on a minimum pad of 2 oz copper scale 1 : 1 on letter size paper a) 50c/w when mounted on a 1in 2 pad of 2 oz copper
FDS2734 single n-chan nel uitrafet trench ? mosfet FDS2734 rev. b www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. on region characteristics 0246810 0 10 20 30 40 50 v gs - descending order pulse duration = 80 p s duty cycle = 0.5%max v gs = 10v 8v 6v 5v i d , drain current (a) v ds , drain to source voltage (v) figure 2. 0 1020304050 0.5 1.0 1.5 2.0 2.5 pulse duration = 80 p s duty cycle = 0.5%max v gs = 8v normalized drain to source on-resistance i d , drain current(a) v gs = 10v v gs = 6v v gs = 4.5v v gs = 5v normalized on-resistance vs drain current and gate voltage figure 3. normalized -50 -25 0 25 50 75 100 125 150 0.4 0.8 1.2 1.6 2.0 2.4 2.8 i d = 3.0a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) on resistance vs junction temperature figure 4. 345678910 0.0 0.1 0.2 0.3 0.4 pulse duration = 80 p s duty cycle = 0.5%max t j = 150 o c t j = 25 o c i d =3a r ds(on) , on-resistance ( m : ) v gs , gate to source voltage (v) on-resistance vs gate to source voltage figure 5. transfer characteristics 23456 0 5 10 15 20 pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 150 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.00.20.40.60.81.01.21.4 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) source to drain diode forward voltage vs source current
FDS2734 single n-chan nel uitrafet trench ? mosfet FDS2734 rev. b www.fairchildsemi.com 4 figure 7. 0 10203040 0 2 4 6 8 10 v dd = 200v v dd = 50v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 125v gate charge characteristics figure 8. 0.1 1 10 100 10 100 1000 5000 ciss coss f = 1mhz v gs = 0v crss capacitance (pf) v ds ,drain to source voltage (v) capacitance vs drain to source voltage figure 9. unclamped inductive switching capability 1e-3 0.01 0.1 1 10 100 0.1 1 10 t j = 125 o c t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) figure 10. 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v gs = 10v v gs = 6v i d , drain current (a) t a , ambient temperature ( o c ) r t ja = 50 o c /w maximum continuous drain current vs ambient temperature figure 11. 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 10us 10ms 1ms 100ms 1s dc single pulse t j = max rated t a = 25 o c operation in this area may be limited by r ds(on) v ds , drain to source voltage (v) i d , drain current (a) forward bias safe operating area figure 12. single pulse maximum power dissipation 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 10 4 v gs = 10v single pulse p ( pk ) , peak transient power (w) t, pulse width (s) t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ----------------------- - typical characteristics t j = 25c unless otherwise noted
10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1e-5 1e-4 1e-3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration(s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 4 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a FDS2734 single n-chan nel uitrafet trench ? mosfet FDS2734 rev. b www.fairchildsemi.com 5 figure 13. transient thermal response curve typical characteristics t j = 25c unless otherwise noted thermal characterization performed using the conditions described in note 1b transient thermal response will change depending on the circuit board design
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